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symbol parameter max. units v ds drain-source voltage 100 v v gs gate-to-source voltage 20 i d @ t a = 25c continuous drain current, v gs @ 10v 5.4 i d @ t a = 70c continuous drain current, v gs @ 10v 4.3 a i dm pulsed drain current 43 p d @t a = 25c maximum power dissipation 2.5 w p d @t a = 70c maximum power dissipation 1.6 linear derating factor 20 mw/c t j operating junction and -55 to + 150 c t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) www.irf.com 1 symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w thermal resistance so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a irf7490pbf hexfet power mosfet notes through are on page 9 absolute maximum ratings v dss r ds(on) max q g 100v 39m @v gs =10v 37nc high frequency dc-dc converters lead-free benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current
irf7490pbf 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 8.0 ??? ??? s v ds = 50v, i d = 3.2a q g total gate charge ??? 37 56 i d = 3.2a q gs gate-to-source charge ??? 8.0 nc v ds = 50v q gd gate-to-drain ("miller") charge ??? 10 v gs = 10v, t d(on) turn-on delay time ??? 13 ??? v dd = 100v t r rise time ??? 4.2 ??? i d = 3.2a t d(off) turn-off delay time ??? 51 ??? r g = 9.1 ? t f fall time ??? 11 ??? v gs = 10v c iss input capacitance ??? 1720 ??? v gs = 0v c oss output capacitance ??? 220 ??? v ds = 25v c rss reverse transfer capacitance ??? 25 ??? pf ? = 1.0mhz c oss output capacitance ??? 1650 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 130 ??? v gs = 0v, v ds = 80v, ? = 1.0mhz c oss eff. effective output capacitance ??? 250 ??? v gs = 0v, v ds = 0v to 80v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 91 mj i ar avalanche current ??? 3.2 a avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 3.2a, v gs = 0v t rr reverse recovery time ??? 67 100 ns t j = 25c, i f = 3.2a q rr reverse recoverycharge ??? 220 330 nc di/dt = 100a/s diode characteristics 2.3 43 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.11 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 33 39 m ? v gs = 10v, i d = 3.2a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 20v gate-to-source reverse leakage ??? ??? -200 na v gs = -20v i gss i dss drain-to-source leakage current
irf7490pbf www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0. 1 1 10 100 v ds , drain-to-source voltage (v) 0. 001 0. 01 0. 1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.7v 20s pulse width tj = 25c 0. 1 1 10 100 v ds , drain-to-source voltage (v) 0. 1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.7v 20s pulse width tj = 150c

-60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0. 5 1. 0 1. 5 2. 0 2. 5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.4a v gs = 10v 3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 0.01 0.10 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 50v 20s pulse width
irf7490pbf 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) cos s crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 102030405060 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v vds= 50v vds= 20v i d = 3.2a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
irf7490pbf www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 1 ! 0.1 %

+ - fig 9. maximum drain current vs. ambient temperature 1e-005 0. 0001 0. 001 0. 01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0. 01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) 25 50 75 100 125 150 t c , case temperature (c) 0 1 2 3 4 5 6 i d , d r a i n c u r r e n t ( a )
irf7490pbf 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 0 1020304050 i d , drain current (a) 0.030 0.035 0.040 0.045 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v 4. 0 8. 0 12. 0 16. 0 v gs , gate -to -source voltage (v) 0. 03 0. 04 0. 05 0. 06 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 3.2a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 240 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.4a 2.6a bottom 3.2a
irf7490pbf www.irf.com 7 fig 16.

for n-channel hexfet power mosfets "!# " $! $ ? # %!&$$ ? ! $$ ? # %#'(&$$ "!!$!$) !*! p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - -
? +, $! -. ? !+!*/0 ? & $! - !11 ? 02+0$! fig 17. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
irf7490pbf 8 www.irf.com so-8 package outline so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 basic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mi l l i me t e r s inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 b as ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c ab e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l ine ms -012 aa. not es : 1. dimens ioning & t ole rancing per as me y14.5m-1994. 2. cont rol l ing dimens ion: mil l imet er 3. di me n s i ons ar e s h own in mi l l i me t e r s [i nch e s ]. 5 di me n s i on doe s not i ncl u de mol d p r ot r u s i ons . 6 di me n s i on doe s not i ncl u de mol d p r ot r u s i ons . mold prot rus ions not t o exceed 0.25 [.010]. 7 dimension is the length of lead for soldering to a s ubstrat e. mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.070 ] dat e code (yww) xxxx international rectifier logo f7101 y = las t digit of t he ye ar part number lot code ww = we e k example: this is an irf7101 (mosfet) p = de s i gnat e s l e ad- f r e e product (optional) a = as s e mb l y s i t e code
irf7490pbf www.irf.com 9 repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 17mh r g = 25 ? , i as = 3.2a. pulse width 300s; duty cycle 2%. when mounted on 1 inch square copper board c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. ou tline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/04

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